CSD87335Q3D, MOSFET 30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 25 A 8-LSON-CLIP -55 to 150
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power Block TI NexFET
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns, 5 ns |
| Forward Transconductance - Min: | 59 S, 107 S |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | LSON-CLIP-8 |
| Pd - Power Dissipation: | 6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.7 nC, 10.7 nC |
| Rds On - Drain-Source Resistance: | 2.4 Ohms, 1.2 Ohms |
| Rise Time: | 29 ns, 27 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 13 ns, 17 ns |
| Typical Turn-On Delay Time: | 8 ns, 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V, 750 mV |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 821 КБ
