CSD88599Q5DC, MOSFETs 60-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm Dual-Cool™ power block, 40 A 22-VSON-CLIP -55 t
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см. техническую документацию
см. техническую документацию
5 100 ֏
от 10 шт. —
3 920 ֏
от 25 шт. —
3 580 ֏
от 100 шт. —
2 860 ֏
1 шт.
на сумму 5 100 ֏
Описание
Unclassified
CSD88599Q5DC 60V Half-Bridge NexFET Power Block Texas Instruments CSD88599Q5DC 60V Half-Bridge NexFET Power Block is an optimized design for high-current motor control applications. These applications include handheld, cordless garden, and power tools. The CSD88599Q5DC utilizes TI’s patented stacked die technology to minimize parasitic inductances while offering a complete half-bridge. The device comes in a space-saving thermally enhanced DualCool™ 5mm × 6mm package. With an exposed metal top, this power block device allows for a simple heat sink application to draw heat out through the top of the package and away from the PCB. This design allows for superior thermal performance at the higher currents demanded by many motor control applications.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: | 2500 |
Fall Time: | 3 ns |
Id - Continuous Drain Current: | 40 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | VSON-CLIP-22 |
Pd - Power Dissipation: | 12 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 43 nC |
Rds On - Drain-Source Resistance: | 1.7 mOhms |
Rise Time: | 20 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 23 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Вес, г | 0.1 |
Техническая документация
Datasheet CSD88599Q5DCT
pdf, 1801 КБ