TPS1120DR, MOSFETs Dual P-Ch Enh-Mode MOSFET
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см. техническую документацию
см. техническую документацию
2 200 ֏
от 10 шт. —
1 760 ֏
от 100 шт. —
1 380 ֏
от 250 шт. —
1 250 ֏
1 шт.
на сумму 2 200 ֏
Описание
Unclassified
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 1.17 |
| Maximum Drain Source Resistance (mOhm) | 400 4.5V |
| Maximum Drain Source Voltage (V) | 15 |
| Maximum Gate Source Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Power Dissipation (mW) | 840 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Small Signal |
| Standard Package Name | SOP |
| Supplier Package | SOIC |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ 10V (nC) | 5.45 |
| Typical Gate Charge @ Vgs (nC) | 5.45 10V |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Continuous Drain Current (Id) | 1.17A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@10V, 1.5A |
| Drain Source Voltage (Vdss) | 15V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Power Dissipation (Pd) | 840mW |
| Total Gate Charge (Qg@Vgs) | 5.45nC@10V |
| Вес, г | 0.076 |
