CMUT3904 TR PBFREE, Bipolar Transistors - BJT NPN Complementary

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Номенклатурный номер: 8005473877

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 40V 200mA 300MHz 250mW Surface Mount SOT-523

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	30 at 100 mA, 1 V
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-523
Pd - Power Dissipation:	250 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
ECCN	EAR99
Frequency - Transition	300MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SC-89, SOT-490
Power - Max	250mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-523
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	40V
Вес, г	0.002