BC857BLP-7, Bipolar Transistors - BJT 250mW 45V
![BC857BLP-7, Bipolar Transistors - BJT 250mW 45V](https://static.chipdip.ru/lib/021/DOC047021428.jpg)
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см. техническую документацию
см. техническую документацию
530 ֏
от 10 шт. —
357 ֏
от 100 шт. —
137 ֏
от 1000 шт. —
98 ֏
1 шт.
на сумму 530 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 50 V |
Collector- Emitter Voltage VCEO Max: | 45 V |
Collector-Emitter Saturation Voltage: | 250 mV |
Configuration: | Single |
DC Collector/Base Gain hfe Min: | 220 |
DC Current Gain hFE Max: | 475 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | DFN1006-3 |
Pd - Power Dissipation: | 400 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 3 |