MMDT3904-7-F, Bipolar Transistors - BJT 40V 200mW
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Описание Транзистор биполярный TSSOP6
Технические параметры
Collector-Emitter Breakdown Voltage | 40V |
Maximum DC Collector Current | 200mA |
Pd - Power Dissipation | 200mW |
Transistor Type | 2 NPNпј€Doubleпј‰ |
Automotive | No |
Configuration | Dual |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 0.85 1mA 10mA|0.95 5mA 50mA |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector Cut-Off Current (nA) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.2 1mA 10mA|0.3 5mA 50mA |
Maximum Collector-Emitter Voltage (V) | 40 |
Maximum DC Collector Current (A) | 0.2 |
Maximum Emitter Base Voltage (V) | 6 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 200 |
Maximum Transition Frequency (MHz) | 300(Min) |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 6 |
Pin Count | 6 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT-26 |
Supplier Package | SOT-363 |
Type | NPN |
Maximum Collector Base Voltage | 60 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Package Type | SOT-363(SC-88) |
Transistor Configuration | Isolated |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 300 КБ
Datasheet
pdf, 190 КБ
Datasheet MMDT3904-7-F
pdf, 345 КБ