FP35R12W2T4, IGBT Modules IGBT-MODULE
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.
Технические параметры
| Channel Type | N |
| Configuration | 3 Phase Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 54 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 215 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | AG-EASY2B-1 |
| Transistor Configuration | 3 Phase |
| Collector Current (DC) | 54(A) |
| Collector-Emitter Voltage | 1200(V) |
| Gate to Emitter Voltage (Max) | ±20(V) |
| Mounting | Screw |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -40C |
| Operating Temperature Classification | Automotive |
| Packaging | Tray |
| Pin Count | 23 |
| Rad Hardened | No |
| Вес, г | 39 |
