TN0620N3-G-P002, MOSFETs N-CH Enhancmnt Mode MOSFET
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Описание
Unclassified
Trans MOSFET N-CH Si 200V 0.25A 3-Pin TO-92 T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current - (A) | 0.25 |
Maximum Drain Source Resistance - (mOhm) | 6000@10V |
Maximum Drain Source Voltage - (V) | 200 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Power Dissipation - (mW) | 1000 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 3 |
Standard Package Name | TO-92 |
Supplier Package | TO-92 |
Typical Input Capacitance @ Vds - (pF) | 110@25V |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Material | Si |
Maximum Continuous Drain Current (A) | 0.25 |
Maximum Drain Source Resistance (mOhm) | 6000@10V |
Maximum Drain Source Voltage (V) | 200 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 1000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 20(Max) |
Typical Input Capacitance @ Vds (pF) | 110@25V |
Typical Rise Time (ns) | 8(Max) |
Typical Turn-Off Delay Time (ns) | 20(Max) |
Typical Turn-On Delay Time (ns) | 10(Max) |
Техническая документация
Datasheet
pdf, 578 КБ
Datasheet TN0620N3-G
pdf, 600 КБ