BSC020N03LSGATMA1, MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3
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1 370 ֏
от 10 шт. —
1 100 ֏
от 100 шт. —
810 ֏
от 500 шт. —
680 ֏
1 шт.
на сумму 1 370 ֏
Описание
Unclassified
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | No Lead |
Maximum Continuous Drain Current (A) | 28 |
Maximum Drain Source Resistance (mOhm) | 2 10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2500 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | OptiMOS |
Product Category | Power MOSFET |
Standard Package Name | SON |
Supplier Package | TDSON EP |
Typical Fall Time (ns) | 7 |
Typical Gate Charge @ 10V (nC) | 70 |
Typical Gate Charge @ Vgs (nC) | 70 10V|34 4.5V |
Typical Input Capacitance @ Vds (pF) | 5400 15V |
Typical Rise Time (ns) | 7 |
Typical Turn-Off Delay Time (ns) | 42 |
Typical Turn-On Delay Time (ns) | 11 |
Forward Diode Voltage | 1.1V |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Resistance | 2.9 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | +20 V |
Maximum Gate Threshold Voltage | 2.2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 96 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | TDSON |
Series | OptiMOS™ 3 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 34 nC @ 4.5 V |
Width | 6.35mm |
Вес, г | 1 |