IKW30N60TFKSA1, IGBT Transistors LOW LOSS DuoPack 600V 30A

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5 600 ֏

от 10 шт. — 5 200 ֏

от 25 шт. — 3 770 ֏

от 100 шт. — 3 110 ֏

Добавить в корзину 1 шт. на сумму 5 600 ֏

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Номенклатурный номер: 8005505211

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Описание Транзистор БТИЗ, 30A 600В TO220-3 Характеристики

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Continuous Collector Current at 25 C	60 A
Continuous Collector Current Ic Max	60 A
Factory Pack Quantity	240
Gate-Emitter Leakage Current	100 nA
Height	20.95 mm
Length	15.9 mm
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	IKW30N60TFKSA1 IKW30N60TXK SP000054887
Pd - Power Dissipation	187 W
Product Category	IGBT Transistors
RoHS	Details
Series	TRENCHSTOP
Technology	Si
Tradename	TRENCHSTOP
Unit Weight	1.340411 oz
Width	5.3 mm
Channel Type	N
Energy Rating	2.1mJ
Gate Capacitance	1630pF
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	45 A
Maximum Power Dissipation	187 W
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Вес, г	5