IXTH110N25T, MOSFETs 110 Amps 250V
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Описание
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Описание Транзистор: N-MOSFET, полевой, 250В, 110А, 694Вт, TO247-3, 170нс Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
California Prop 65 | Warning Information |
Current - Continuous Drain (Id) @ 25В°C | 110A (Tc) |
Drain to Source Voltage (Vdss) | 250V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 157nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 694W (Tc) |
Rds On (Max) @ Id, Vgs | 24mOhm @ 55A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-247 (IXTH) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Case | TO247-3 |
Drain current | 110A |
Drain-source voltage | 250V |
Features of semiconductor devices | thrench gate power mosfet |
Gate charge | 157nC |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | IXYS |
Mounting | THT |
On-state resistance | 26mΩ |
Polarisation | unipolar |
Power dissipation | 694W |
Reverse recovery time | 170ns |
Type of transistor | N-MOSFET |
Вес, г | 3 |
Техническая документация
Datasheet IXTH110N25T
pdf, 200 КБ