Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › TJ10S04M3L(T6L1,NQ, MOSFET P-Ch MOS 33.8 mOhm ...

TJ10S04M3L(T6L1,NQ, MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V

Изображения служат только для ознакомления,
см. техническую документацию

1936 шт., срок 5-8 недель

1 600 ֏

Добавить в корзину 1 шт. на сумму 1 600 ֏

Номенклатурный номер: 8005509627

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSVI Small Signal MOSFETs
Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Id - Continuous Drain Current:	10 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	27 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	33.8 mOhms
Series:	TJ10S04M3L
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSVI
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.33