TK7A90E,S4X, MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
π-MOS VIII MOSFETsToshiba -MOS VIII MOSFETs are 10V Gate Drive, single N-channel devices, based on the Toshiba eighth generation planar semiconductor process, which combines high levels of cell integration with optimised cell design. The technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low R DS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through hole form factor, and in a surface mounted DPAK package.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 7 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 45 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 32 nC |
Rds On - Drain-Source Resistance: | 1.6 Ohms |
Rise Time: | 20 ns |
Series: | TK7A90E |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MOSVIII |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 85 ns |
Typical Turn-On Delay Time: | 55 ns |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Channel Mode | Enhancement |
Continuous Drain Current | 7(A) |
Drain-Source On-Volt | 900(V) |
Gate-Source Voltage (Max) | '±30(V) |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | TO-220SIS |
Packaging | Rail/Tube |
Pin Count | 3+Tab |
Polarity | N |
Power Dissipation | 45(W) |
Rad Hardened | No |
Type | Power MOSFET |
Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 227 КБ
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