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TPN2R703NL,L1Q, MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V

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22137 шт., срок 6-9 недель

1 470 ֏

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Номенклатурный номер: 8005509706

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSVIII-H Low Voltage High Efficiency MOSFETs

Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Id - Continuous Drain Current:	45 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TSON-8
Pd - Power Dissipation:	42 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	21 nC
Rds On - Drain-Source Resistance:	3.3 mOhms
Series:	TPN2R703NL
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSVIII-H
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Вес, г	0.02