SI1021R-T1-GE3, MOSFETs -60V Vds 20V Vgs SC75A
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Описание
Unclassified
Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 0.19 |
Maximum Drain Source Resistance (MOhm) | 4000@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum IDSS (uA) | 0.025 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 250 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SC |
Supplier Package | SC-75A |
Typical Gate Charge @ Vgs (nC) | 1.7@15V |
Typical Input Capacitance @ Vds (pF) | 23@25V |
Вес, г | 0.0204 |
Техническая документация
Datasheet
pdf, 154 КБ