SI4427BDY-T1-GE3, MOSFETs 30V 12.6A 2.5W 12.5mohm @ 4.5V
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Описание
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Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Id - Continuous Drain Current: | 12.6 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | SI4427BDY-GE3 |
Pd - Power Dissipation: | 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 70 nC |
Rds On - Drain-Source Resistance: | 19.5 mOhms |
Series: | SI4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Вес, г | 0.75 |
Техническая документация
Datasheet
pdf, 159 КБ