IRFD9020PBF, MOSFETs 60V P-CH HEXFET MOSFET H
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Описание
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МОП-транзистор 60V P-CH HEXFET МОП-транзистор H
Технические параметры
| Id - непрерывный ток утечки | 1.6 A |
| Pd - рассеивание мощности | 1.3 W |
| Qg - заряд затвора | 19 nC |
| Rds Вкл - сопротивление сток-исток | 280 mOhms |
| Vds - напряжение пробоя сток-исток | 60 V |
| Vgs - напряжение затвор-исток | 20 V, + 20 V |
| Vgs th - пороговое напряжение затвор-исток | 4 V |
| Вид монтажа | Through Hole |
| Высота | 3.37 mm |
| Длина | 6.29 mm |
| Канальный режим | Enhancement |
| Категория продукта | МОП-транзистор |
| Количество каналов | 1 Channel |
| Конфигурация | Single |
| Максимальная рабочая температура | + 175 C |
| Минимальная рабочая температура | 55 C |
| Подкатегория | MOSFETs |
| Полярность транзистора | P-Channel |
| Размер фабричной упаковки | 2500 |
| Серия | IRFD |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Упаковка | Tube |
| Упаковка / блок | HVMDIP-4 |
| Ширина | 5 mm |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 1.6 |
| Maximum Drain Source Resistance (MOhm) | 280 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 1300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 4 |
| Pin Count | 4 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | DIP |
| Supplier Package | HVMDIP |
| Typical Fall Time (ns) | 29 |
| Typical Gate Charge @ 10V (nC) | 19(Max) |
| Typical Gate Charge @ Vgs (nC) | 19(Max)10V |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Typical Gate to Source Charge (nC) | 5.4(Max) |
| Typical Input Capacitance @ Vds (pF) | 570 25V |
| Typical Output Capacitance (pF) | 360 |
| Typical Reverse Recovery Charge (nC) | 320 |
| Typical Rise Time (ns) | 68 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 13 |
| Forward Diode Voltage | 6.3V |
| Maximum Continuous Drain Current | 1.6 A |
| Maximum Drain Source Resistance | 280 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 1.3 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | HVMDIP |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 5mm |
| Case | HVMDIP |
| Drain current | -1.6A |
| Drain-source voltage | -60V |
| Gate charge | 19nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | VISHAY |
| On-state resistance | 0.28Ω |
| Polarisation | unipolar |
| Power dissipation | 1.3W |
| Pulsed drain current | -13A |
| Type of transistor | P-MOSFET |
| Вес, г | 23 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1143 КБ
Datasheet IRFD9020PBF
pdf, 260 КБ
Datasheet IRFD9020PBF
pdf, 267 КБ
