IRFR1N60APBF, MOSFET N-Chan 600V 1.4 Amp
![Фото 1/4 IRFR1N60APBF, MOSFET N-Chan 600V 1.4 Amp](https://static.chipdip.ru/lib/792/DOC043792465.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/294/DOC005294584.jpg)
![](https://static.chipdip.ru/lib/461/DOC004461947.jpg)
![](https://static.chipdip.ru/lib/918/DOC006918617.jpg)
1 960 ֏
от 10 шт. —
1 520 ֏
от 100 шт. —
1 130 ֏
от 500 шт. —
890 ֏
Добавить в корзину 1 шт.
на сумму 1 960 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 1.4 |
Maximum Drain Source Resistance (MOhm) | 7000 10V |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 25 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 36000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 20 |
Typical Gate Charge @ 10V (nC) | 14(Max) |
Typical Gate Charge @ Vgs (nC) | 14(Max)10V |
Typical Input Capacitance @ Vds (pF) | 229 25V |
Typical Rise Time (ns) | 14 |
Typical Turn-Off Delay Time (ns) | 18 |
Typical Turn-On Delay Time (ns) | 9.8 |
Brand | Vishay Semiconductors |
Factory Pack Quantity | 2000 |
Fall Time | 20 ns |
Forward Transconductance - Min | 0.88 S |
Height | 2.39 mm |
Id - Continuous Drain Current | 1.4 A |
Length | 6.73 mm |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252AA-3 |
Packaging | Reel |
Pd - Power Dissipation | 36 W |
Qg - Gate Charge | 14 nC |
Rds On - Drain-Source Resistance | 7 Ohms |
Rise Time | 14 ns |
RoHS | Details |
Series | IRF/SIHRx1N60A |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns |
Typical Turn-On Delay Time | 9.8 ns |
Unit Weight | 0.050717 oz |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
Width | 6.22 mm |
Вес, г | 1 |