IRFUC20PBF, MOSFETs N-Chan 600V 2.0 Amp
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Описание
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Описание Транзистор: N-MOSFET, полевой, 600В, 1,3А, 42Вт, IPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Вид монтажа | Through Hole |
| Высота | 6.22 mm |
| Длина | 6.73 mm |
| Категория продукта | МОП-транзистор |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 3000 |
| Серия | IRFR/U |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Упаковка | Tube |
| Упаковка / блок | TO-251-3 |
| Ширина | 2.39 mm |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.39.00.01 |
| Tab | Tab |
| Package Height | 6.22(Max) |
| Package Width | 2.39(Max) |
| Package Length | 6.73(Max) |
| Mounting | Through Hole |
| PCB changed | 3 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 100 |
| Maximum Drain Source Resistance (mOhm) | 4400@10V |
| Typical Gate Charge @ Vgs (nC) | 18(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 18(Max) |
| Typical Input Capacitance @ Vds (pF) | 350@25V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 23 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Typical Turn-On Delay Time (ns) | 10 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Supplier Package | IPAK |
| Pin Count | 3 |
| Standard Package Name | TO-251 |
| Military | No |
| Base Product Number | IRFUC20 -> |
| Current - Continuous Drain (Id) @ 25В°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1.2A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-251AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| FET Feature | - |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Series | - |
| Вес, г | 0.33 |
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