IKW40N65ES5XKSA1, IGBT Transistors INDUSTRY 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
IKW40N65ES5, SP001319680
Технические параметры
| Collector Emitter Saturation Voltage | 1.35В |
| Collector Emitter Voltage Max | 650В |
| Continuous Collector Current | 79А |
| Power Dissipation | 230Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | TRENCHSTOP(TM)5 |
| Максимальная Рабочая Температура | 175 C |
| Стиль Корпуса Транзистора | TO-247 |
| Automotive | No |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 79 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 230 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | TO-247 |
| Supplier Package | TO-247 |
| Tab | Tab |
| Technology | Trench Stop 5 |
| Typical Collector Emitter Saturation Voltage (V) | 1.35 |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 79 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 230 W |
| Package Type | PG-TO247-3 |
