CSD87502Q2T
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см. техническую документацию
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1 590 ֏
от 10 шт. —
1 320 ֏
от 25 шт. —
1 230 ֏
от 100 шт. —
950 ֏
1 шт.
на сумму 1 590 ֏
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Arrays
Описание Транзистор: N-MOSFET, полевой, 30В, 5А, 2,3Вт, WSON6, 2x2мм Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Base Product Number | CSD87502 -> |
Current - Continuous Drain (Id) @ 25В°C | 5A |
Drain to Source Voltage (Vdss) | 30V |
ECCN | EAR99 |
FET Feature | Logic Level Gate, 5V Drive |
FET Type | 2 N-Channel (Dual) |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 15V |
Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | 6-WDFN Exposed Pad |
Power - Max | 2.3W |
Rds On (Max) @ Id, Vgs | 32.4mOhm @ 4A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | NexFETв„ў -> |
Supplier Device Package | 6-WSON (2x2) |
Vgs(th) (Max) @ Id | 2V @ 250ВµA |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 3 ns, 3 ns |
Forward Transconductance - Min: | 75 S, 75 S |
Id - Continuous Drain Current: | 5 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | WSON-FET-6 |
Pd - Power Dissipation: | 2.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 6 nC |
Rds On - Drain-Source Resistance: | 35 mOhms |
Rise Time: | 11 ns, 11 ns |
Series: | CSD87502Q2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 12 ns, 12 ns |
Typical Turn-On Delay Time: | 3 ns, 3 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Continuous Drain Current (Id) | 5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 32.4mΩ@4A, 10V |
Drain Source Voltage (Vdss) | 30V |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Input Capacitance (Ciss@Vds) | 353pF@15V |
Power Dissipation (Pd) | 2.3W |
Total Gate Charge (Qg@Vgs) | 6nC@10V |
Type | 2 N-Channel |