CSD25483F4
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 1.4 S |
| Id - Continuous Drain Current | 1.6 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | PICOSTAR-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 960 pC |
| Rds On - Drain-Source Resistance | 1.07 Ohms |
| Rise Time | 3.7 ns |
| Series | CSD25483F4 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 17.4 ns |
| Typical Turn-On Delay Time | 4.3 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 950 mV |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 9000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 1.4 S |
| Id - Continuous Drain Current: | 1.6 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PICOSTAR-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 960 pC |
| Rds On - Drain-Source Resistance: | 1.07 Ohms |
| Rise Time: | 3.7 ns |
| Series: | CSD25483F4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 17.4 ns |
| Typical Turn-On Delay Time: | 4.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 950 mV |
| Height | 0.35 mm |
| Length | 1 mm |
| RoHS | Details |
| Width | 0.64 mm |
| Вес, г | 64 |
Техническая документация
Datasheet CSD25483F4
pdf, 1876 КБ
Документация
pdf, 795 КБ
