Категория	Транзистор
Тип	полевой
Вид	MOSFET

Base Product Number	IRFP264 ->
Current - Continuous Drain (Id) @ 25В°C	38A (Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	280W (Tc)
Rds On (Max) @ Id, Vgs	75mOhm @ 23A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	250
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	38
Maximum Drain Source Resistance (mOhm)	75@10V
Typical Gate Charge @ Vgs (nC)	210(Max)@10V
Typical Gate Charge @ 10V (nC)	210(Max)
Typical Input Capacitance @ Vds (pF)	5400@25V
Maximum Power Dissipation (mW)	280000
Typical Fall Time (ns)	92
Typical Rise Time (ns)	99
Typical Turn-Off Delay Time (ns)	110
Typical Turn-On Delay Time (ns)	22
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Automotive	No
Pin Count	3
Supplier Package	TO-247AC
Standard Package Name	TO-247
Military	No
Mounting	Through Hole
Package Height	20.82(Max)
Package Length	15.87(Max)
Package Width	5.31(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	92 ns
Forward Transconductance - Min:	20 S
Id - Continuous Drain Current:	38 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	280 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	210 nC
Rds On - Drain-Source Resistance:	75 mOhms
Rise Time:	99 ns
Series:	IRFP
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	22 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Maximum Continuous Drain Current	38 A
Maximum Drain Source Resistance	75 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	280 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Package Type	TO-247AC
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	210 nC @ 10 V
Width	5.31mm
FET Feature	-
Manufacturer	Vishay Siliconix
Packaging	Tube
Series	-
Вес, г	57

IRFP264PBF

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