CSD88537NDT
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см. техническую документацию
см. техническую документацию
2 160 ֏
от 10 шт. —
1 630 ֏
от 100 шт. —
1 170 ֏
от 250 шт. —
810 ֏
1 шт.
на сумму 2 160 ֏
Описание
Описание Транзистор N-MOSFET x2, полевой, 60В, 15А, 2,1Вт, SO8, NexFET™ Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Development Kit: | DRV8308EVM, DRV8307EVM, BOOST-DRV8711 |
| Factory Pack Quantity: Factory Pack Quantity: | 750 |
| Fall Time: | 19 ns |
| Forward Transconductance - Min: | 42 S |
| Id - Continuous Drain Current: | 16 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Rise Time: | 15 ns |
| Series: | CSD88537ND |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 5 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Вес, г | 25 |
