IHW40N65R5XKSA1
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Описание
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology.
Технические параметры
| Channel Type | N |
| Energy Rating | 1.91mJ |
| Gate Capacitance | 4740pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 40 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 230 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 193nC |
| IGBT Type | - |
| Input Type | Standard |
| Manufacturer | Infineon Technologies |
| Operating Temperature | -40В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 230W |
| Reverse Recovery Time (trr) | 90ns |
| Series | TrenchStopВ® |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 630ВµJ(on), 140ВµJ(off) |
| Td (on/off) @ 25В°C | 30ns/258ns |
| Test Condition | 400V, 20A, 10 Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IHW40N65R5XKSA1
pdf, 2127 КБ
