CSD87355Q5DT

CSD87355Q5DT
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4 070 ֏
от 10 шт.3 110 ֏
от 100 шт.2 210 ֏
от 250 шт.2 090 ֏
Добавить в корзину 1 шт. на сумму 4 070 ֏
Номенклатурный номер: 8006102455
Бренд: Texas Instruments

Описание

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 250
Fall Time: 3 ns, 6 ns
Forward Transconductance - Min: 90 S, 151 S
Id - Continuous Drain Current: 45 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: LSON-CLIP-8
Pd - Power Dissipation: 12 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 13.7 nC, 31.5 nC
Rds On - Drain-Source Resistance: 3.9 mOhms
Rise Time: 18 ns, 14 ns
Series: CSD87355Q5D
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 13 ns, 27 ns
Typical Turn-On Delay Time: 8 ns, 10 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -8 V, +10 V
Vgs th - Gate-Source Threshold Voltage: 1.9 V
Вес, кг 9.9