AUIRF540Z
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см. техническую документацию
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3 170 ֏
от 50 шт. —
2 200 ֏
от 100 шт. —
1 860 ֏
от 500 шт. —
1 580 ֏
1 шт.
на сумму 3 170 ֏
Альтернативные предложения1
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
Описание Транзистор: N-MOSFET, полевой, 100В, 36А, 92Вт, TO220AB Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Base Product Number | AUIRF540 -> |
Current - Continuous Drain (Id) @ 25В°C | 36A (Tc) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 92W (Tc) |
Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | HEXFETВ® -> |
Supplier Device Package | TO-220AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 36 A |
Maximum Drain Source Resistance | 26.5 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 92 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TO-220AB |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 42 nC @ 10 V |
Width | 4.82mm |
Техническая документация
Datasheet
pdf, 702 КБ
Datasheet
pdf, 1680 КБ
Datasheet AUIRF540Z
pdf, 326 КБ
Datasheet AUIRF540Z
pdf, 344 КБ