CSD19535KTT, MOSFET 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175
![CSD19535KTT, MOSFET 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175](https://static.chipdip.ru/lib/456/DOC025456353.jpg)
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
100V 200A 300W 3.4mΩ@100A,10V 3.4V@250uA null TO-263-3 MOSFETs ROHS
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Fall Time: | 15 ns |
Forward Transconductance - Min: | 301 S |
Id - Continuous Drain Current: | 197 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 75 nC |
Rds On - Drain-Source Resistance: | 3.4 mOhms |
Rise Time: | 18 ns |
Series: | CSD19535KTT |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 21 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Continuous Drain Current (Id) | 200A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.4mΩ@100A, 10V |
Drain Source Voltage (Vdss) | 100V |
Gate Threshold Voltage (Vgs(th)@Id) | 3.4V@250uA |
Input Capacitance (Ciss@Vds) | 7.93nF@50V |
Operating Temperature | -55℃~+175℃@(Tj) |
Power Dissipation (Pd) | 300W |
Total Gate Charge (Qg@Vgs) | 98nC@10V |
Type | null |
Вес, г | 2.2 |
Техническая документация
Datasheet
pdf, 597 КБ