2SC4215-Y(TE85L,F), Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V

3707 шт., срок 6-9 недель

630 ֏

1 шт. на сумму 630 ֏

Номенклатурный номер: 8006212701

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

РЧ-транзистор NPN 30V 20mA 550MHz 100mW Surface Mount USM

Base Product Number	CMH02 ->
Current - Collector (Ic) (Max)	20mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
ECCN	EAR99
Frequency - Transition	550MHz
Gain	17dB ~ 23dB
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	2dB ~ 5dB @ 100MHz
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SC-70, SOT-323
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	USM
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Brand	Toshiba
Collector- Base Voltage VCBO	40 V
Collector- Emitter Voltage VCEO Max	30 V
Configuration	Single
Continuous Collector Current	20 mA
DC Collector/Base Gain hfe Min	40
DC Current Gain hFE Max	200
Emitter- Base Voltage VEBO	4 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	550 MHz
Manufacturer	Toshiba
Maximum DC Collector Current	20 mA
Mounting Style	SMD/SMT
Packaging	Cut Tape
Pd - Power Dissipation	100 mW
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SC4215
Transistor Polarity	NPN
Unit Weight	0.000176 oz
Вес, г	1