SI4599DY-T1-GE3, MOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR
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Описание
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Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 9 ns, 9 ns |
Forward Transconductance - Min: | 14 S, 22 S |
Id - Continuous Drain Current: | 5.8 A, 6.8 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | SI4599DY-GE3 |
Pd - Power Dissipation: | 3 W, 3.1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 11.7 nC, 25 nC |
Rds On - Drain-Source Resistance: | 35.5 mOhms, 45 mOhms |
Rise Time: | 10 ns, 12 ns |
Series: | SI4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel, P-Channel |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time: | 15 ns, 30 ns |
Typical Turn-On Delay Time: | 7 ns, 7 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V, 1.4 V |
Channel Mode | Enhancement |
Channel Type | N, P |
Maximum Continuous Drain Current | 4.7 A, 6.8 A |
Maximum Drain Source Resistance | 42.5 mΩ, 62 mΩ |
Maximum Drain Source Voltage | 40 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 3 W, 3.1 W |
Minimum Gate Threshold Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOIC |
Pin Count | 8 |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 11.7 nC @ 10 V, 25 nC @ 10 V |
Width | 4mm |
Вес, г | 0.126 |