IXTA36N30P, MOSFETs MOSFET N-CH 300V 36A
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см. техническую документацию
см. техническую документацию
6 400 ֏
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4 160 ֏
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3 570 ֏
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Описание
Unclassified
Описание Транзистор N-МОП, полевой, 300В, 36А, 300Вт, TO263
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 28 ns |
| Id - Continuous Drain Current: | 36 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Rds On - Drain-Source Resistance: | 110 mOhms |
| Rise Time: | 30 ns |
| Series: | IXTA36N30 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 97 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.5 |
Техническая документация
Datasheet
pdf, 295 КБ
