SI4056ADY-T1-GE3, MOSFETs 100V N-CH D-S MOSFET
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1 070 ֏
от 10 шт. —
890 ֏
от 100 шт. —
600 ֏
от 500 шт. —
452 ֏
Добавить в корзину 1 шт.
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Описание
Unclassified
Si4056ADY N-Channel MOSFETVishay / Siliconix Si4056ADY N-Channel MOSFET comes in a SO-8 package with 100V drain-source voltage rating and 40A pulsed drain current. The MOSFET features low R DS x Qg figure-of-merit (FOM) and is tuned for the lowest R DS x Q oss FOM. Vishay Si4056ADY N-Channel MOSFET is ideally suited for primary-side switches, LED drivers, load switches, and synchronous rectification applications.
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 49 S |
| Id - Continuous Drain Current: | 8.3 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19.2 nC |
| Rds On - Drain-Source Resistance: | 29.2 mOhms |
| Rise Time: | 6 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | TrenchFET Power MOSFET |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 8.3 A |
| Maximum Drain Source Resistance | 0.0292 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SO-8 |
| Pin Count | 8 |
| Series | TrenchFET |
| Transistor Material | Si |
| Вес, г | 0.75 |
