IXFH26N50P, MOSFETs HiPERFET Id26 BVdass500

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9 400 ֏

от 30 шт. — 6 700 ֏

от 120 шт. — 5 700 ֏

от 270 шт. — 5 600 ֏

Добавить в корзину 1 шт. на сумму 9 400 ֏

Номенклатурный номер: 8006215301

Unclassified

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Resistance	230 mΩ
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	400 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Series	HiperFET, Polar
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	60 nC @ 10 V
Width	5.3mm
Вес, г	10