IGW20N60H3, IGBTs 600V HI SPEED SW IGBT
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Описание
Unclassified
IGBT Gate Drives with Murata DC-DC ConvertersIGBTs are commonly used in high power inverter and converter circuits and can require significant isolated gate drive power to switch optimally. Small isolated DC/DC converters can provide that power. The same considerations apply in principal to gate drives for silicon, silicon carbide and gallium nitride MOSFETs.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IGW2N6H3XK SP000852238 IGW20N60H3FKSA1 |
| Pd - Power Dissipation: | 170 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | HighSpeed 3 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 6.05 |
Техническая документация
Datasheet
pdf, 1945 КБ
