SI3585CDV-T1-GE3, MOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR
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630 ֏
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Описание
Unclassified
Integrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 9 ns, 28 ns |
| Forward Transconductance - Min: | 1 S, 12 S |
| Id - Continuous Drain Current: | 2.1 A, 3.9 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TSOP-6 |
| Part # Aliases: | SI3585CDV-GE3 |
| Pd - Power Dissipation: | 1.3 W, 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.2 nC, 6 nC |
| Rds On - Drain-Source Resistance: | 58 mOhms, 195 mOhms |
| Rise Time: | 16 ns, 37 ns |
| Series: | SI3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 13 ns, 25 ns |
| Typical Turn-On Delay Time: | 15 ns, 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Brand | Vishay/Siliconix |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns, 28 ns |
| Forward Transconductance - Min | 1 S, 12 S |
| Id - Continuous Drain Current | 2.1 A, 3.9 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 2 Channel |
| Package / Case | TSOP-6 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI3585CDV-GE3 |
| Pd - Power Dissipation | 1.3 W, 1.4 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 3.2 nC, 6 nC |
| Rds On - Drain-Source Resistance | 58 mOhms, 195 mOhms |
| Rise Time | 16 ns, 37 ns |
| Series | SI3 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time | 13 ns, 25 ns |
| Typical Turn-On Delay Time | 15 ns, 16 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3.9 A, 2.1 A |
| Maximum Drain Source Resistance | 0.058 O, 0.195 O |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | TSOP-6 |
| Pin Count | 6 |
| Вес, г | 0.02 |
