IRFR9310TRLPBF, MOSFET P-Chan 400V 1.8 Amp
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 470 ֏
от 10 шт. —
1 200 ֏
от 100 шт. —
920 ֏
от 500 шт. —
760 ֏
Добавить в корзину 1 шт.
на сумму 1 470 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET P-CH Si 400V 1.8A 3-контактный (2 вывода) DPAK T / R
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 24 ns |
| Id - Continuous Drain Current: | 1.8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-252-3 |
| Part # Aliases: | IRFR9310TRLPBF-BE3 |
| Pd - Power Dissipation: | 50 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 7 Ohms |
| Rise Time: | 10 ns |
| Series: | IRFR |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Material | Si |
| Maximum Continuous Drain Current (A) | 1.8 |
| Maximum Diode Forward Voltage (V) | 4 |
| Maximum Drain Source Resistance (mOhm) | 7000@10V |
| Maximum Drain Source Voltage (V) | 400 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 50000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 24 |
| Typical Gate Charge @ 10V (nC) | 13(Max) |
| Typical Gate Charge @ Vgs (nC) | 13(Max)@10V |
| Typical Gate Plateau Voltage (V) | 5.1 |
| Typical Gate to Drain Charge (nC) | 5(Max) |
| Typical Gate to Source Charge (nC) | 3.2(Max) |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Typical Output Capacitance (pF) | 50 |
| Typical Reverse Recovery Charge (nC) | 640 |
| Typical Reverse Recovery Time (ns) | 170 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8@25V |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 11 |
| Вес, г | 0.33 |
