IRFPC60LCPBF, MOSFETs 600V N-CH HEXFET
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7 800 ֏
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6 400 ֏
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5 900 ֏
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4 650 ֏
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Описание
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Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 16 A |
Maximum Drain Source Resistance | 400 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 280 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247AC |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 120 nC @ 10 V |
Width | 5.31mm |
Current - Continuous Drain (Id) @ 25В°C | 16A(Tc) |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
Manufacturer | Vishay Siliconix |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power Dissipation (Max) | 280W(Tc) |
Rds On (Max) @ Id, Vgs | 400mOhm @ 9.6A, 10V |
Supplier Device Package | TO-247-3 |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Вес, кг | 69 |