IXFN360N15T2, MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET

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58 700 ֏

от 10 шт. — 47 400 ֏

от 20 шт. — 42 200 ֏

от 50 шт. — 41 400 ֏

1 шт. на сумму 58 700 ֏

Номенклатурный номер: 8006236559

Unclassified

A wide range of advanced discrete Power MOSFET devices from IXYS

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	310 A
Maximum Drain Source Resistance	4 mΩ
Maximum Drain Source Voltage	150 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	1.07 kW
Minimum Gate Threshold Voltage	2.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Screw Mount
Number of Elements per Chip	1
Package Type	SOT-227
Pin Count	4
Series	GigaMOS TrenchT2 HiperFET
Typical Gate Charge @ Vgs	715 nC @ 10 V
Width	25.07mm
Case	SOT227B
Drain current	310A
Drain-source voltage	150V
Electrical mounting	screw
Gate charge	715nC
Gate-source voltage	±30V
Kind of channel	enhanced
Manufacturer	IXYS
Mechanical mounting	screw
On-state resistance	4mΩ
Polarisation	unipolar
Power dissipation	1.07kW
Pulsed drain current	900A
Reverse recovery time	150ns
Semiconductor structure	single transistor
Technology	GigaMOS™, HiPerFET™, TrenchT2™
Type of module	MOSFET transistor
Вес, г	30