SI1031R-T1-GE3, MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V

Фото 1/2 SI1031R-T1-GE3, MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V
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Номенклатурный номер: 8006240423

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Trans MOSFET P-CH 20V 0.14A 3-Pin SC-75A T/R

Технические параметры

Automotive No
Channel Mode Enhancement
Channel Type P
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Maximum Continuous Drain Current (A) 0.14
Maximum Drain Source Resistance (mOhm) 8000 4.5V
Maximum Drain Source Voltage (V) 20
Maximum Gate Source Voltage (V) ±6
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Process Technology TrenchFET
Product Category Power MOSFET
Standard Package Name SC
Supplier Package SC-75A
Typical Fall Time (ns) 30(Max)
Typical Gate Charge @ Vgs (nC) 1.5 4.5V
Typical Rise Time (ns) 30(Max)
Typical Turn-Off Delay Time (ns) 60(Max)
Typical Turn-On Delay Time (ns) 55(Max)
Maximum Continuous Drain Current 140 mA
Maximum Drain Source Voltage 20 V
Mounting Type Surface Mount
Package Type SC-75A
Вес, г 1

Техническая документация

Datasheet
pdf, 130 КБ
Datasheet SI1031R-T1-GE3
pdf, 133 КБ