IXFK32N100Q3, MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A
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53 800 ֏
от 25 шт. —
38 100 ֏
от 100 шт. —
35 600 ֏
Добавить в корзину 1 шт.
на сумму 53 800 ֏
Описание
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HiPerFET Power MOSFETsIXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all.
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 25 |
Id - Continuous Drain Current: | 32 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-264-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 1.25 kW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 195 nC |
Rds On - Drain-Source Resistance: | 320 mOhms |
Rise Time: | 250 ns |
Series: | IXFK32N100 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 1 kV |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
Вес, г | 10 |
Техническая документация
Datasheet
pdf, 1961 КБ