IXFK32N100Q3, MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A

IXFK32N100Q3, MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A
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53 800 ֏
от 25 шт.38 100 ֏
от 100 шт.35 600 ֏
Добавить в корзину 1 шт. на сумму 53 800 ֏
Номенклатурный номер: 8006248794
Бренд: Ixys Corporation

Описание

Unclassified
HiPerFET Power MOSFETs
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all.

Технические параметры

Brand: IXYS
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 25
Id - Continuous Drain Current: 32 A
Manufacturer: IXYS
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-264-3
Packaging: Tube
Pd - Power Dissipation: 1.25 kW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 195 nC
Rds On - Drain-Source Resistance: 320 mOhms
Rise Time: 250 ns
Series: IXFK32N100
Subcategory: MOSFETs
Technology: Si
Tradename: HiPerFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 6.5 V
Вес, г 10

Техническая документация

Datasheet
pdf, 1961 КБ