SI1441EDH-T1-GE3, MOSFET -20V Vds 10V Vgs SC70-6
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см. техническую документацию
см. техническую документацию
720 ֏
от 10 шт. —
580 ֏
от 100 шт. —
365 ֏
от 500 шт. —
275 ֏
Добавить в корзину 1 шт.
на сумму 720 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Решения для промышленного электропитанияVishay предлагает один из самых широких в отрасли наборов полупроводниковых и пассивных компонентов для промышленных источников питания. Ассортимент продукции Vishay для промышленных источников питания включает силовые МОП-транзисторы, силовые ИС, выпрямители, диоды, конденсаторы, резисторы и катушки индуктивности.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 560 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-363-6 |
| Part # Aliases: | SI1441EDH-T1-BE3 SI1417EDH-T1-GE3 |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 33 nC |
| Rds On - Drain-Source Resistance: | 34 mOhms |
| Rise Time: | 300 ns |
| Series: | SI1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 1620 ns |
| Typical Turn-On Delay Time: | 150 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain Source Resistance (mOhm) | 41@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1600 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| Typical Fall Time (ns) | 600|560 |
| Typical Gate Charge @ Vgs (nC) | 12.5@4.5V|22@8V |
| Typical Rise Time (ns) | 300|90 |
| Typical Turn-Off Delay Time (ns) | 1620|2500 |
| Typical Turn-On Delay Time (ns) | 150|50 |
| Вес, г | 1 |
