SI4162DY-T1-GE3, MOSFET 30V Vds 20V Vgs SO-8
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 30В, 15,4А, 3,2Вт, SO8
Технические параметры
| Вид монтажа | SMD/SMT |
| Высота | 1.75 mm |
| Длина | 4.9 mm |
| Другие названия товара № | SI4162DY-GE3 |
| Категория продукта | МОП-транзистор |
| Коммерческое обозначение | TrenchFET |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 2500 |
| Серия | SI4 |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Упаковка / блок | SO-8 |
| Ширина | 3.9 mm |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 19.3 |
| Maximum Drain Source Resistance (mOhm) | 7.9@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 20 |
| Typical Gate Charge @ Vgs (nC) | 20@10V|8.8@4.5V |
| Typical Gate to Drain Charge (nC) | 2.2 |
| Typical Gate to Source Charge (nC) | 3.5 |
| Typical Input Capacitance @ Vds (pF) | 1155@15V |
| Typical Output Capacitance (pF) | 260 |
| Typical Reverse Recovery Charge (nC) | 15 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 20 |
| Case | SO8 |
| Drain current | 15.4A |
| Drain-source voltage | 30V |
| Gate charge | 8.8nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| On-state resistance | 7.9mΩ |
| Polarisation | unipolar |
| Power dissipation | 3.2W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.187 |
