TPH5200FNH,L1Q, MOSFET Power MOSFET N-Channel
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 12 ns |
Id - Continuous Drain Current: | 26 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOP-8 |
Pd - Power Dissipation: | 78 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 22 nC |
Rds On - Drain-Source Resistance: | 44 mOhms |
Rise Time: | 8 ns |
Series: | TPH5200FNH |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSVIII-H |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 36 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Current - Continuous Drain (Id) @ 25В°C | 26A(Tc) |
Drain to Source Voltage (Vdss) | 250V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 100V |
Manufacturer | Toshiba Semiconductor and Storage |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C(TJ) |
Package / Case | 8-PowerVDFN |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 78W(Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 13A, 10V |
Series | U-MOSVIII-H |
Supplier Device Package | 8-SOP Advance(5x5) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Вес, г | 0.08 |
Техническая документация
Datasheet TPH5200FNH.L1Q
pdf, 262 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
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