IRFR224PBF, MOSFETs N-Chan 250V 3.8 Amp
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Описание
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Описание Транзистор: N-MOSFET, полевой, 250В, 2,4А, 42Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Вид монтажа | SMD/SMT |
Высота | 2.38 mm |
Длина | 6.73 mm |
Категория продукта | МОП-транзистор |
Подкатегория | MOSFETs |
Размер фабричной упаковки | 3000 |
Серия | IRFR |
Технология | Si |
Тип продукта | MOSFET |
Торговая марка | Vishay / Siliconix |
Упаковка | Tube |
Упаковка / блок | TO-252-3 |
Ширина | 6.22 mm |
Base Product Number | IRFR224 -> |
Current - Continuous Drain (Id) @ 25В°C | 3.8A (Tc) |
Drain to Source Voltage (Vdss) | 250V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tube |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.3A, 10V |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | D-Pak |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 3.8 |
Maximum Drain Source Resistance (mOhm) | 1100 10V |
Maximum Drain Source Voltage (V) | 250 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 25 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2500 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 12 |
Typical Gate Charge @ 10V (nC) | 14(Max) |
Typical Gate Charge @ Vgs (nC) | 14(Max)10V |
Typical Input Capacitance @ Vds (pF) | 260 25V |
Typical Rise Time (ns) | 13 |
Typical Turn-Off Delay Time (ns) | 20 |
Typical Turn-On Delay Time (ns) | 7 |
FET Feature | - |
Manufacturer | Vishay Siliconix |
Packaging | Cut Tape(CT) |
Series | - |
Maximum Continuous Drain Current | 3.8 A |
Maximum Drain Source Resistance | 1.1 Ω |
Maximum Drain Source Voltage | 250 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.5 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Package Type | DPAK(TO-252) |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 14 nC @ 10 V |
Width | 6.22mm |
Вес, г | 1.438 |
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