MMBTA42-7-F, Bipolar Transistors - BJT 300V 300mW

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242 ֏

от 10 шт. — 128 ֏

от 100 шт. — 62 ֏

от 1000 шт. — 46 ֏

1 шт. на сумму 242 ֏

Номенклатурный номер: 8006259741

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: NPN; биполярный; 300В; 0,5А; 300мВт; SOT23 Характеристики

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	300 V
Collector- Emitter Voltage VCEO Max	300 V
Collector-Emitter Saturation Voltage	0.5 V
Configuration	Single
Continuous Collector Current	0.5 A
DC Collector/Base Gain Hfe Min	40
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	50 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	0.5 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Packaging	Cut Tape or Reel
Pd - Power Dissipation	300 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	MMBTA42
Subcategory	Transistors
Transistor Polarity	NPN
Maximum Collector Base Voltage	300 V
Maximum Collector Emitter Voltage	300 V
Maximum Emitter Base Voltage	6 V
Maximum Power Dissipation	300 mW
Minimum DC Current Gain	40
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	0.008