BC857BS-7-F, Bipolar Transistors - BJT PNP BIPOLAR

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308 ֏

от 10 шт. — 194 ֏

от 100 шт. — 84 ֏

от 1000 шт. — 56 ֏

1 шт. на сумму 308 ֏

Номенклатурный номер: 8006259979

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: PNP x2, биполярный, 45В, 0,1А, 200мВт, SOT363 Характеристики

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	-50 V
Collector- Emitter Voltage VCEO Max	-45 V
Collector-Emitter Saturation Voltage	-400 mV
Configuration	Dual
DC Collector/Base Gain Hfe Min	220 at-2 mA, -5 V
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	100 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	-200 mA
Maximum Operating Temperature	+125 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-363-6
Packaging	Cut Tape or Reel
Pd - Power Dissipation	200 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	BC857B
Subcategory	Transistors
Transistor Polarity	PNP
Maximum Collector Base Voltage	-50 V
Maximum Collector Emitter Voltage	-45 V
Maximum Emitter Base Voltage	-5 V
Maximum Power Dissipation	200 mW
Minimum DC Current Gain	220
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOT-363(SC-88)
Pin Count	6
Transistor Configuration	Isolated
Transistor Type	PNP
Вес, г	0.006