CSD19502Q5B, MOSFET N-CH 3.4mOhm 80V Power MOSFET
3 020 ֏
от 10 шт. —
2 380 ֏
от 100 шт. —
1 810 ֏
от 250 шт. —
1 580 ֏
Добавить в корзину 1 шт.
на сумму 3 020 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm 8-VSON-CLIP -55 to 150
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 88 S |
| Height | 1 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 6 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-Clip-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 3.2 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 48 nC |
| Rds On - Drain-Source Resistance | 4.1 mOhms |
| Rise Time | 6 ns |
| RoHS | Details |
| Series | CSD19502Q5B |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Width | 5 mm |
| Вес, г | 9 |
Техническая документация
Документация
pdf, 900 КБ
