MMDT4401-7-F, Bipolar Transistors - BJT 40V 200mW

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580 ֏

от 10 шт. — 348 ֏

от 100 шт. — 141 ֏

от 1000 шт. — 102 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8006277781

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Trans GP BJT NPN 40V 0.6A 200mW 6-Pin SOT-363 T/R

Automotive	No
Configuration	Dual
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Base Emitter Saturation Voltage (V)	0.95 15mA 150mA\|1.2 50mA 500mA
Maximum Collector Base Voltage (V)	60
Maximum Collector-Emitter Saturation Voltage (V)	0.4 15mA 150mA\|0.75 50mA 500mA
Maximum Collector-Emitter Voltage (V)	40
Maximum DC Collector Current (A)	0.6
Maximum Emitter Base Voltage (V)	6
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	200
Maximum Transition Frequency (MHz)	250(Min)
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Product Category	Bipolar Small Signal
Standard Package Name	SOT-26
Supplier Package	SOT-363
Type	NPN
Brand	Diodes Incorporated
Collector- Base Voltage VCBO	60 V
Collector- Emitter Voltage VCEO Max	40 V
Collector-Emitter Saturation Voltage	0.75 V
Continuous Collector Current	0.6 A
DC Current Gain HFE Max	300
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	250 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	0.6 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-363-6
Pd - Power Dissipation	200 mW
Product Type	BJTs-Bipolar Transistors
Series	MMDT44
Subcategory	Transistors
Transistor Polarity	NPN
Вес, г	0.006