IRFR110TRPBF, MOSFET N-Chan 100V 4.3 Amp
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см. техническую документацию
см. техническую документацию
1 200 ֏
от 10 шт. —
980 ֏
от 100 шт. —
680 ֏
от 500 шт. —
540 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Транзистор полевой MOSFET N-канальный 100В 4.3A
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Product Category | Power MOSFET |
| Configuration | Single Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 4.3 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 25 |
| Maximum Drain Source Resistance (mOhm) | 540@10V |
| Typical Gate Charge @ Vgs (nC) | 8.3(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 8.3(Max) |
| Typical Input Capacitance @ Vds (pF) | 180@25V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 9.4 |
| Typical Rise Time (ns) | 16 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Supplier Package | DPAK |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 2.39(Max) |
| Package Length | 6.73(Max) |
| Package Width | 6.22(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 772 КБ
