IXTH1N250, MOSFETs 1 Amps 2500V 40 Rds
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см. техническую документацию
см. техническую документацию
47 800 ֏
от 10 шт. —
40 700 ֏
от 30 шт. —
33 800 ֏
от 60 шт. —
33 200 ֏
Добавить в корзину 1 шт.
на сумму 47 800 ֏
Описание
Unclassified
High Voltage IEEE 1500V+ Discrete Semiconductors Transistors
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 39 ns |
| Forward Transconductance - Min: | 1 mS |
| Id - Continuous Drain Current: | 1.5 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Rds On - Drain-Source Resistance: | 40 Ohms |
| Rise Time: | 25 ns |
| Series: | IXTH1N250 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 132 ns |
| Typical Turn-On Delay Time: | 69 ns |
| Vds - Drain-Source Breakdown Voltage: | 2.5 kV |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 3 |
Техническая документация
Datasheet
pdf, 111 КБ
